GeneSiC G3R350MT12D Silicon Carbide MOSFET Owner’s Manual
Features
- G3R™ (3rd Generation) Technology
- Low Temperature Coefficient of R
- Lower Q and Smaller R
- Low Device Capacitances (C , C )
- LoRing™ – Electromagnetically Optimized Design
- Superior Cost-Performance Index
- Robust Body Diode with Low V and Low Q
- 100% Avalanche (UIL) Tested
Package
Advantages
- Compatible with Commercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Reduced Ringing
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
- Superior Robustness and System Reliability
Applications
- Auxiliary Power Supply
- Solar Inverters
- UPS
- High Voltage DC-DC Converters
- Switched Mode Power Supplies
- Auxiliary Motor Drives
- High Frequency Converters
Absolute Maximum Ratings (At T = 25°C Unless Otherwise Stated)
| Parameter | Symbol | Conditions | Values | Unit | Note |
| Drain-Source Voltag | VDS(max | V = 0 V, I = 100 µA | 1200 | V | |
| Gate-Source Voltage (Dynamic) | VGS(max) | -10/+22 | V | ||
| Gate-Source Voltage (Static) | VGS(op)-ON VGS(op)-OFF |
Recommended Operation | +15 to +18 -5 to -3 |
V | |
| Continuous Forward Current | ID | Tc=25°C, VGS-5/+15 VTc=100°C, VGS-5/+15 VTc=135°C, VGS = -5/+15 V | 1075 | A | Fig. 15 |
| Pulsed Drain Current | ID(pulse) | tp ≤3µs, D ≤ 1%, VGS = 15 V, Note 1 | 16 | A | Fig. 14 |
| Power Dissipation | PD | Tc = 25°C | 63 | W | Fig. 16 |
| Non-Repetitive Avalanche Energy | EAS | L = 21.5 MH, IAS = 2.0 A | 43 | mJ | |
| Operating and Storage Temperature | Tj, Tstg | -55 to 175 | °C |
Thermal/Package Characteristics
| Parameter | Symbol | Conditions | Min. | Values Type | Max | Unit | Note |
| Thermal Resistance, Junction – Case | Rthuc | 2.4 | °C/W | Fig. 13 | |||
| WT | 6.1 | g | |||||
| TM | Screws to Heatsink | 1.1 | Nm |
Electrical Characteristics (At T = 25°C Unless Otherwise Stated)
Documents / Resources
 |
GeneSiC G3R350MT12D Silicon Carbide MOSFET [pdf] Owner's Manual G3R350MT12D Silicon Carbide MOSFET, G3R350MT12D, Silicon Carbide MOSFET, Carbide MOSFET, MOSFET |
References
-
genesicsemi.com/sic-mosfet/
-
genesicsemi.com/compliance
-
genesicsemi.com/quality
-
genesicsemi.com/reliability
-
genesicsemi.com/technical-support
- User Manual
